Electricity: electrical systems and devices – Housing or mounting assemblies with diverse electrical... – For electronic systems and devices
Reexamination Certificate
2006-04-18
2006-04-18
Group, Karl (Department: 1755)
Electricity: electrical systems and devices
Housing or mounting assemblies with diverse electrical...
For electronic systems and devices
C174S250000, C428S209000, C428S337000, C428S450000, C428S697000, C428S698000, C428S901000
Reexamination Certificate
active
07031166
ABSTRACT:
A silicon nitride sintered body comprising Mg and at least one rare earth element selected from the group consisting of La, Y, Gd and Yb, the total oxide-converted content of the above elements being 0.6–7 weight %, with Mg converted to MgO and rare earth elements converted to rare earth oxides RExOy. The silicon nitride sintered body is produced by mixing 1–50 parts by weight of a first silicon nitride powder having a β-particle ratio of 30–100%, an oxygen content of 0.5 weight % or less, an average particle size of 0.2–10 μm, and an aspect ratio of 10 or less, with 99–50 parts by weight of α-silicon nitride powder having an average particle size of 0.2–4 μm; and sintering the resultant mixture at a temperature of 1,800° C. or higher and pressure of 5 atm or more in a nitrogen atmosphere.
REFERENCES:
patent: 4608354 (1986-08-01), Avelia et al.
patent: 5098872 (1992-03-01), Suyama et al.
patent: 5908797 (1999-06-01), Urashima et al.
patent: 6242374 (2001-06-01), Komatsu et al.
patent: 6294244 (2001-09-01), Iwaida et al.
patent: 6313054 (2001-11-01), Matsubara
patent: 6391812 (2002-05-01), Araki et al.
patent: 1-160870 (1989-06-01), None
patent: 04-175268 (1992-06-01), None
patent: 06-216481 (1994-08-01), None
patent: 06-263410 (1994-09-01), None
patent: 08-319187 (1996-12-01), None
patent: 09-030866 (1997-02-01), None
patent: 10-065296 (1998-03-01), None
patent: 10-194842 (1998-07-01), None
patent: 11-349381 (1999-12-01), None
patent: 2000-344577 (2000-12-01), None
Naoto Hirosaki, et al.; Precipitation of Second Phase in Si3N4of Self-reinforced Silicon Nitride; The abstract papers presented at the Annual Meeting of The Ceramic Society of Japan, 1998, held on Mar. 29-31, 1998; at Tsudanuma Campus (Narashino City), Chiba Institute of Technology; published by the Ceramic Society of Japan; pp. 196-197.
Kiyoshi Hirao, et al; Preparation of Rod-like β-Si3N4Single Crystal Partcles; Journal of the Ceramic Society of Japan 101[9] 11078-1080 (1993).
Hamayoshi Shigeyuki
Imamura Hisayuki
Kawata Tsunehiro
Sobue Masahisa
Group Karl
Hitachi Metals Ltd.
LandOfFree
Silicon nitride powder, silicon nitride sintered body,... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Silicon nitride powder, silicon nitride sintered body,..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon nitride powder, silicon nitride sintered body,... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3608314