Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Passivating of surface
Reexamination Certificate
2005-12-09
2008-03-04
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Passivating of surface
C438S047000, C438S094000, C438S167000, C438S172000, C438S191000, C438S762000, C438S791000, C257S192000, C257S194000, C257SE21454
Reexamination Certificate
active
07338826
ABSTRACT:
This invention pertains to an electronic device and to a method for making it. The device is a heterojunction transistor, particularly a high electron mobility transistor, characterized by presence of a 2 DEG channel. Transistors of this invention contain an AlGaN barrier and a GaN buffer, with the channel disposed, when present, at the interface of the barrier and the buffer. Surface treated with ammonia plasma resembles untreated surface. The method pertains to treatment of the device with ammonia plasma prior to passivation to extend reliability of the device beyond a period of time on the order of 300 hours of operation, the device typically being a 2 DEG AlGaN/GaN high electron mobility transistor with essentially no gate lag and with essentially no rf power output degradation.
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Binari Steven C.
Edwards Andrew P.
Mittereder Jeffrey A.
Ahmad Aisha
Ahmadi Mohsen
Guest Rae Lynn P.
Karasek John J.
Lebentritt Michael
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