Silicon nitride insulating substrate for power semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package

Reexamination Certificate

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Reexamination Certificate

active

07019390

ABSTRACT:
An aspect of the present invention provides a power module for automotive switching applications including a plurality of semiconductor chips and a unitary silicon nitride substrate. The plurality of semiconductor chips are attached to the silicon nitride substrate and the substrate is configured to have a thermal coefficient of expansion substantially the same as the plurality of semiconductor chips.

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