Silicon nitride hardstop encapsulation layer for STI region

Details Silicon nitride hardstop encapsulation layer for STI region Silicon nitride hardstop encapsulation layer for STI region

2009-05-29

2011-10-04

Luu, Chuong A. (Department: 2892)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S424000, C438S427000, C438S296000

Reexamination Certificate

active

08030173

ABSTRACT:
A semiconductor process and apparatus provides an encapsulated shallow trench isolation region by forming a silicon nitride layer (96) to cover a shallow trench isolation region (95), depositing a protective dielectric layer (97, 98) over the silicon nitride layer (96), and polishing and densifying the protective dielectric layer (97, 98) to thereby form a densified silicon nitride encapsulation layer (99) over the shallow trench isolation region (95).

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