Silicon nitride formation and use in self-aligned semiconductor

Details Silicon nitride formation and use in self-aligned semiconductor Silicon nitride formation and use in self-aligned semiconductor

1983-11-04

1985-07-09

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

156653, 156657, 156664, 204192E, 204192EC, 29571, 29576W, 427 89, 427 94, 427 85, H01L 21318

Patent

active

045282110

ABSTRACT:
A method of forming a silicon nitride coating in situ on a silicon surface by ion milling. The ion milling and silicon nitride formation process are uniquely integrated in semiconductor manufacturing methods to provide several benefits, including contact areas being substantially registered with and self-aligned with functional regions.

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patent: 4411929 (1983-10-01), Sato
Chiu et al., "Low Energy Implantation into Silicon . . . ", J. Electrochem. Soc.: Solid State Science and Technology, Feb. 1982, pp. 408-412, vol. 129, No. 2.

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