Silicon nitride film formation method

Details Silicon nitride film formation method Silicon nitride film formation method

1995-09-12

1997-05-13

Utech, Benjamin

Coating processes

Electrical product produced

Condenser or capacitor

427 81, 4271262, 427255, 4272552, 4272557, C23C 1634

Patent

active

056290438

ABSTRACT:
In the formation of a silicon nitride film, dichlorosilane and ammonia are used as source gas and, for example, argon is used as carrier gas. The pressure (total pressure) inside a chamber is set to about 100 to 300 Torr (1.33.times.10.sup.4 to 4.00.times.10.sup.4 Pa). The desirable setting is that, for example, dichlorosilane is 60 SCCM, ammonia is 300 SCCM and hydrogen is 20 SLM. When the silicon nitride film is formed under such conditions, improvement in a masking effect of the silicon nitride film for preventing oxidation can be achieved.

REFERENCES:
patent: 4871416 (1989-10-01), Fukuda
patent: 4931897 (1990-06-01), Tsukamoto et al.
patent: 5129958 (1992-07-01), Nagashima et al.
patent: 5298287 (1994-03-01), Veltri
patent: 5482739 (1996-01-01), Hey et al.

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