Silicon nitride film, a semiconductor device, a display...

Details Silicon nitride film, a semiconductor device, a display... Silicon nitride film, a semiconductor device, a display...

2007-09-25

2007-09-25

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S057000, C257S072000, C257S347000

Reexamination Certificate

active

10873285

ABSTRACT:
The present invention provides a method for forming by plasma CVD a silicon nitride film that can be formed over heat-sensitive elements as well as an electroluminescent element and that has favorable barrier characteristics. Further, the present invention also provides a semiconductor device, a display device and a light-emitting display device formed by using the silicon nitride film. In the method for forming a silicon nitride film by plasma CVD, silane (SiH4), nitrogen (N2) and a rare gas are introduced into a deposition chamber in depositing, and the reaction pressure is within the range from 0.01 Torr to 0.1 Torr.

REFERENCES:
patent: 6274887 (2001-08-01), Yamazaki et al.
patent: 6414825 (2002-07-01), Inoue et al.
patent: 1 168 427 (2002-01-01), None
patent: 06-061222 (1994-03-01), None
patent: 09-205209 (1997-08-01), None
patent: 2002-151514 (2002-05-01), None

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