Silicon nitride deposition method

Details Silicon nitride deposition method Silicon nitride deposition method

1996-05-30

1999-08-17

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437242, H01L 2176

Patent

active

059393335

ABSTRACT:
A silicon nitride deposition method includes providing a substrate surface including one or more component surfaces. At least a monolayer of silicon is predeposited on the one or more component surfaces of the substrate surface resulting in a substantially native oxide free uniform predeposited silicon substrate surface. Thereafter, a silicon nitride layer is deposited on the predeposited silicon substrate surface after the silicon predeposition. Further, another silicon nitride deposition method includes providing a silicon based substrate surface. The substrate surface is nitridated in an atmosphere of dimethylhydrazine, and thereafter, a silicon nitride layer is deposited on the nitridated surface. The nitridation of the substrate surface results in a thickness less than three monolayers of silicon nitride.

REFERENCES:
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patent: 4855258 (1989-08-01), Allman et al.
patent: 5010024 (1991-04-01), Allen et al.
Seiichi Takami, et al., "Monolayer nitridation of silicon surfaces by a dry chemical process using dimethylhydrazine or ammonia", Appl. Phys. Lett., 66 (12), 1527-1529 (1995).

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