Silicon nitride circuit substrate and semiconductor device conta

Details Silicon nitride circuit substrate and semiconductor device conta Silicon nitride circuit substrate and semiconductor device conta

1998-03-16

2000-08-22

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Semiconductor is an oxide of a metal or copper sulfide

257629, H01L 2912

Patent

active

061076384

ABSTRACT:
Disclosed is a silicon nitride circuit substrate, a manufacturing procee thereof, and a semiconductor device therewith. The circuit substrate comprises: a silicon nitride substrate; a metal circuit plate; and a intermediate layer being interposed between the silicon nitride board and the metal circuit plate for joining the silicon nitride substrate and the metal circuit plate, and having a compound containing an aluminum oxide component. The concentration of the aluminum oxide component in the intermediate layer is higher in the side of the metal circuit plate than in the side of the silicon nitride board.

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patent: 5912066 (1999-06-01), Takahashi
patent: 5928768 (1999-07-01), Ikeda et al.
S. Tanaka et al., Proc. of International Symposium Ceramic Components for Engine pp. 249-256 (1993).

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