Silicon nitride based sintered material and process of manufactu

Details Silicon nitride based sintered material and process of manufactu Silicon nitride based sintered material and process of manufactu

1991-02-01

1992-07-14

Dixon, Jr., William R.

Compositions: ceramic

Ceramic compositions

Refractory

501 94, 501 96, 501 98, 501102, 501103, 501108, C04B 3558, C04B 3548, C04B 3549

Patent

active

051302799

ABSTRACT:
There is disclosed a silicon nitride based sintered material which contains 0.1% to 20% by volume of zirconium oxide, 0.1% to 14% by volume of zirconium nitride, 3% to 15% by volume of a binder phase of an Mg-Si-O-N or Mg-Si-Zr-O-N system, and balance .beta.-silicon nitride. The sintered material may include an oxide layer of an average thickness of 10 to 1,000 .mu.m in a surface thereof and having a zirconium oxide concentration increasing toward the surface thereof. A process specifically adapted to manufacture the above sintered material is also disclosed.

REFERENCES:
patent: 4406667 (1983-09-01), Sarin et al.
patent: 4441894 (1984-04-01), Sarin et al.
patent: 4560669 (1985-12-01), Matsuhiro et al.
patent: 4652276 (1987-03-01), Burden
patent: 4745022 (1988-05-01), Miyake et al.
patent: 4801565 (1989-01-01), Matsui
patent: 4877759 (1989-10-01), Holt et al.
patent: 4879263 (1989-11-01), Komeya et al.
Derwent abstract (AN78-254 625) of Japanese Patent JP. A-62-176 957.

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