Silicon nitride based sintered body

Details Silicon nitride based sintered body Silicon nitride based sintered body

1994-06-30

1997-04-22

Group, Karl

Compositions: ceramic

Ceramic compositions

Refractory

501 98, C04B 35587, C04B 35599

Patent

active

056229054

ABSTRACT:
Discloses a silicon nitride based sintered body composed only of uniform, fine crystal grains, and improved in both strength and fracture toughness in the middle and low temperature ranges. A crystalline silicon nitride powder composed of crystal grains whose longer-axis diameter is not more than 200 nm or an amorphous silicon nitride powder is used as material powder. The silicon nitride powder is sintered at a temperature of 1200.degree. C. to 1400.degree. C. or sintered with a product of sintering temperature (.degree. C.) and sintering time (sec) below 600000 (.degree. C..multidot.sec) at a temperature of 1400.degree. C. to 1900.degree. C. Thus, a silicon nitride based sintered body in which the longer-axis diameter of silicon nitride and/or sialon crystals is not more than 200 nm is obtained.

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