Silicon nitride articles with controlled multi-density regions

Details Silicon nitride articles with controlled multi-density regions Silicon nitride articles with controlled multi-density regions

1986-08-20

1992-04-07

Sikes, William L.

Communications: radio wave antennas

Antennas

With housing or protective covering

343873, 343705, 343708, H01Q 142

Patent

active

051032392

ABSTRACT:
A monolithic silicon nitride radome structure having a forward portion, an after portion and a transition portion therebetween, is provided. The forward portion has a density of about 0.75 to 1.0 g/cc, the after portion has a density of about 1.6 to 2.0 g/cc and the transition portion has regions of increasing density, from forward to aft, each region having a greater density than the preceding portion or region. Also provided is a method for manufacturing the above-described radome structure which comprises filling and compacting a series of formulations consisting essentially of particulate silicon, silicon nitride and a fugitive pore-forming material into a radome mold, removing the shaped compact from the mold, subliming the pore-forming material from the compact to form a porous compact structure, and reacting the porous structure with nitrogen to convert the porous structure to an identically shaped radome structure of .alpha.-silicon nitride whiskers.

REFERENCES:
patent: 4177230 (1979-12-01), Mazdiyasni
patent: 4358772 (1982-11-01), Leggett
patent: 4388255 (1983-06-01), Simpson
patent: 4520364 (1985-05-01), Perry
patent: 4642299 (1987-02-01), Hsieh
patent: 4677443 (1987-06-01), Koetje et al.

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