Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Patent
1995-10-27
1997-05-06
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
257 95, H01L 2715
Patent
active
056273860
ABSTRACT:
The invention provides light sources which are easily compatible with standard silicon VLSI processing and can be located directly in the material of the silicon VLSI chip. P-type silicon substrate is processed to produce proturbances, the proturbances preferably having tip dimensions on the order of 5-10 mm. A native oxide film (SiO.sub.2) is caused to develop on the surface of the silicon substrate. A thin, transparent, conductive film is then deposited on top of the SiO.sub.2. Electrical contacts are made to the top of the conductive film and to the bottom of the silicon substrate. The carriers for electroluminescence are supplied by the P-doped silicon substrate (holes) and the conductive film (electrons). When a voltage is applied across the layers via the electrical contacts, the holes are concentrated in the region of the tip of the proturbances because the electric field lines concentrate near a pointed object, and electron current across the SiO.sub.2 barrier in response to the voltage drop will be largest in the vicinity of the tip because the SiO.sub.2 barrier is thinnest there, resulting in strong visible luminescence.
REFERENCES:
R. Venkatasubramanian et al., Visible Light Emission from Quantized Planar E Structures, Appl. Phys. Lett 59, 1603 (1991).
A.J. Steckl et al., Localized Fabrication of SI Nanostructures by Focused Ion Beam Implantation, Appl. Phys. Lett 60, 1833 (1992).
X.-Z. Tu, Fabrication of Silicon Microstructures Based on Selective Formation and Etching of Porous Silicon, Journal of Electrochemical Society 135, 2105 (1988).
R.M. Ostrom, D.M. Tanenbaum, and Alan Gallagher, Appl. Phys. Lett. 61, 925 (1992).
Fifth International Vacuum Microelectronics Conference, Vienna, Austria 13-17 Jul. 1992, Program and Abstracts.
P. Sutardja et al. Simulation of Stress Effects on Reaction Kinetics and Oxidant Diffusion in Silicon Oxidation, IEDM 86, 20.3.
R. Tsu, H. Shen, and M. Dutta, "Correlation of Raman and Photoluminescence Spectra of Porous Silicon," Appl. Phys. Lett. 60, 112 (1992).
H. Takagi et al., "Quantum Size Effects on Photoluminescence in Ultrafine Si Particles," Appl. Phys. Lett 56, 2379 (1990).
D.J. DiMaria et al., "Electroluminescence Studies in Silicon Dioxide Films Containing Tiny Silicon Islands," J. Appl. Phys. 56, 401 (1984).
J.F. Harvey et al. "Raman and Photoluminescence Studies of Porous Silicon," in Quantum Well and Superlattice Physics IV, ed. G.H. Doehler and E.S. Koteles, (SPIE vol. 1675, 1992), p. 134.
F. Namavar et al. "Visible Electroluminescence from Porous Silicon np Hetrojunction Diodes," Appl. Phys. Lett. 60, 2514 (May 1992).
Harvey James F.
Lux Robert A.
Tsu Raphael
Anderson William H.
Jackson, Jr. Jerome
Kelley Nathan K.
The United States of America as represented by the Secretary of
Zelenka Michael
LandOfFree
Silicon nanostructure light-emitting diode does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Silicon nanostructure light-emitting diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon nanostructure light-emitting diode will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2134462