Silicon nanoparticle field effect transistor and transistor...

Details Silicon nanoparticle field effect transistor and transistor... Silicon nanoparticle field effect transistor and transistor...

2006-01-10

2006-01-10

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S027000

Reexamination Certificate

active

06984842

ABSTRACT:
A silicon nanoparticle transistor and transistor memory device. The transistor of the invention has silicon nanoparticles, dimensioned on the order of 1 nm, in a gate area of a field effect transistor. The resulting transistor is a transistor in which single electron flow controls operation of the transistor. Room temperature operation is possible with the novel transistor structure by radiation assistance, with radiation being directed toward the silicon nanoparticles to create necessary holes in the quantum structure for the flow of an electron. The transistor of the invention also forms the basis for a memory device. The device is a flash memory device which will store electrical charge instead of magnetic effects.

REFERENCES:
patent: 3597624 (1971-08-01), Weiner et al.
patent: 4931692 (1990-06-01), Takagi et al.
patent: 5308804 (1994-05-01), Lee
patent: 5527386 (1996-06-01), Statz
patent: 5537000 (1996-07-01), Alivisatos et al.
patent: 5561679 (1996-10-01), Mannik et al.
patent: 5690807 (1997-11-01), Clark, Jr. et al.
patent: 5695617 (1997-12-01), Graiver et al.
patent: 5703896 (1997-12-01), Pankove et al.
patent: 5714766 (1998-02-01), Chen et al.
patent: 5747180 (1998-05-01), Miller et al.
patent: 5770022 (1998-06-01), Chang et al.
patent: 5881200 (1999-03-01), Burt
patent: 5891548 (1999-04-01), Graiver et al.
patent: 5906670 (1999-05-01), Dobson et al.
patent: 5932889 (1999-08-01), Matsumura et al.
patent: 5942748 (1999-08-01), Russell et al.
patent: 6060743 (2000-05-01), Sugiyama et al.
patent: 6326311 (2001-12-01), Ueda et al.
patent: 6407424 (2002-06-01), Forbes
patent: 0354141 (1990-02-01), None
Tiware, S., et al., “A silicon nanocrystals based memory,” Appl. Phys. Lett. 68(10), Mar. 4, 1996, pp 1377-79.
J.L. Heinrich, C.L. Curtis, G.M. Credo, K.L. Kavanagh, M.J. Sailor, “Luminescent Colloidal Silicon Suspensions from Porous Silicon”,Science,vol. 255, Jan. 3, 1992, pp. 66-68.
E. Werwa, A.A. Seraphin and K.D. Kolenbrander,Excitation Intensity and Temperature Dependent Photoluminescence Behavior of Silicon Nanoparticles,Material Research Society Symposium Proceedings, vol. 452 pp. 129-134, 1997.
R.W. Collins, P.M. Fauchet, I. Shimizu, J.C. Vial, T. Shimada and A.P. Alivisatos,Luminescence Properties of Silicon Nanocrystals,Advances in Microcrystalline and Nanocrystaline Semiconductor Symposium, Boston, MA, USA, Dec. 2-6, 1996 (abstract).
Shoutian Li, Stuart J. Silvers and M. Samy El-Shall,Luminescence Properties of Silicon Nanocrystals,Material Research Society Symposium Proceedings, vol. 452, pp. 141-146, 1997.
Kouichi Murakami and Tetsuya Makimura,Silicon nanoparticles with visible light emission —Laser ablation—,Oyo Buturi, vol. 67, No. 7, pp. 817-821, Jul. 1998 (with verified translation).
U.S. Appl. No. 09/781,147, filed Feb. 9, 2001, Nayfeh et al., entitled Silicon Nanoparticle Electronic Switches.
U.S. Appl. No. 09/572,121, filed May 17, 2000, Nayfeh et al., entitled Silicon Nanoparticle Microcrystal Nonlinear Optical Devices.
U.S. Appl. No. 09/426,389, filed Oct. 22, 1999, Nayfeh et al., entitled Silicon Nanoparticle and Method for Producing the Same.
U.S. Appl. No. 09/426,204, filed Oct. 25, 1999, Nayfeh et al., entitled Silicon Nanoparticle Stimulated Emission Devices.
S. T. Yau, D. Saltz, M. H. Nayfeh, “Laser-Assisted Deposition of Nanometer Structures Using Scanning Tunneling Microscopy”,Appl. Phys. Lett.,vol. 57, No. 27, Dec. 31, 1990, pp. 2913-2915.
S.T. Yau, X. Zheng, M.H. Nayfeh, “Nanolithography of Chemically Prepared Si With a Scanning Tunneling Microscope”,Appl. Phys. Lett.,vol. 59, No. 19, Nov. 4, 1991, pp. 2457-2459.
M. Nayfeh, “Fabrication of Nanometer Scale Structures”, SPIE Institutes, vol. IS 10, (1993), pp. 200-217.
D. Andsager, J. Hilliard, J.M. Hetrick, L.H. AbuHassan, M. Plisch, M.H. Nayfeh, “Quenching of Porous Silicon Photoluminescence by Deposition of Metal Adsorbates”,J. Appl. Phys.,vol. 74, No. 7, Oct. 1, 1993, pp. 4783-4785.
J. Hillard, D. Andsager, L. Abu Hassan, H.M. Nayfeh, M. H. Nayfeh, “Infrared Spectroscopy and Secondary Ion Mass Spectrometry of Luminescent, Nonluminescent and Metal Quenched Porous Silicon”,J. Appl. Phys.,vol. 76, No. 4, Aug. 15, 1994, pp. 2423-2428.
D. Andsager, J. Hilliard, M.H. Nayfeh, “Behavior of Porous Silicon Emission Spectra During Quenching by Immersion in Metal Ion Solutions”,Appl. Phys. Lett.,vol. 64, No. 9, Feb. 28, 1994, pp. 1141-1143.
D. Andsager, J.M. Hetrick, J. Hilliard, M.H. Nayfeh, “Diffusion of Copper in Porous Silicon”,J. of Appl. Phys.,vol. 77, No. 9, May 1, 1995, pp. 1-4.
J.E. Hilliard, H.M. Nayfeh, M.H. Nayfeh, “Re-Establishment of Photoluminescence in Cu Quenched Porous Silicon by Acid Treatment”,J. App. Phys.,vol. 77, No. 8, Apr. 15, 1995, pp. 4130-4132.
N. Rigakis, J. Hillard, L. Abu Hassan, J. Hetrick, D. Andsager, M.H. Nayfeh, “Effect of Oxidation Treatments on Photoluminescence Excitation of Porous Silicon”,J. App. Phys.,vol. 81, No. 8, Jan. 1, 1997, pp. 440-444.
N. Rigagis, Z. Yamani, L. Abu Hassan, J. Hilliard, M.H. Nayfeh, “Time-Resolved Measurements of the Photoluminescence of Cu-Quenched Porous Silicon”,Appl. Phys. Lett.,vol. 69, 1996, pp. 2216-2218.
W.H. Thompson, Z. Yamani, L.H. Abu Hassan, J.E. Greene, M. Nayfeh, “Room Temperature Oxidation Enhancement of Porous Si(001) Using Ultraviolet-Ozone Exposure”,J. Appl. Phys.,vol. 80, No. 9, Nov. 1, 1996, pp. 5415-5421.
Z. Yamani. W.H. Thompson, L. Abu Hassan, M.H. Nayfeh, “Ideal Anodization of Silicon”,Appl. Phys. Lett.,vol. 70, No. 25, Jun. 23, 1997, pp. 3404-3406.
M.H. Nayfeh, N. Rigakis, Z. Yamani, “Photoexcitation of Si-Si Surface States in Nanocrystallites”,Physical Review B,vol. 56, No. 4, Jul. 15, 1997, pp. 2079-2084.
Z. Yamani, S. Ashhab, A. Nayfeh, W.H. Thompson, M. Nayfeh, “Red to Green Rainbow Photoluminescence from Unoxidized Silicon Nanocrystallites”,J. Appl. Phys.,vol. 83, No. 7, Apr. 1, 1998, pp. 3929-3931.
Z. Yamani, N. Rigakis, M.H. Nayfeh, “Excitation of Size Selected Nanocrystallites in Porous Silicon”,Appl. Phys. Lett.,vol. 72, No. 20, May 18, 1998, pp. 2556-2558.
W.H. Thompson, Z. Yamani, L. Abu Hassan, O. Gurdal, M. Nayfeh, “The Effect of Ultrathin Oxides on Luminescent Silicon Nanocrystallites”,Appl. Phys. Lett.,vol. 73, No. 6, Aug. 10, 1998, pp. 841-843.
M.H. Nayfeh, N. Rigakis, Z. Yamani, “Photoexcitation of Si-Si Radiative Surface States in Nanocrystallites”, Mater. Res. Soc. Proc., Boston, MA, 1997.
M.H. Nayfeh, Z. Yamani, O. Gurdal, A. Alaql, “Nanostructure of Porous Silicon using Transmission Microscopy”, Mater. Res. Soc. Proc., Boston, MA, 1998.
Z. Yamani, A. Alaql, J. Therrien, O. Nayfeh, M. Nayfeh, “Revival of Interband Crystallite Reflectance from Nano-crystallites in Porous Silicon by Immersion Plating”,Appl. Phys. Lett.,vol. 74, No. 23, Jun. 7, 1999, pp. 3483-3485.
Z. Yamani, O. Gurdal, A. Alaql, M.H. Nayfeh, “Correlation of Diffuse Scattering with Nanocrystallite Size in Porous Silicon Using Transmission”,J. Appl. Phys.,vol. 85, No. 12, Jun. 15, 1999, pp. 8050-8053.
L.T. Canham, “Silicon Quantum Wire Array Fabrication by Electrochemical and Chemical Dissolution of Wafers”,Appl. Phys. Lett.,vol. 57, No. 10, Sep. 3, 1990, pp. 1046-1048.
A.G. Cullis, L.T. Canham, P.D.J. Calcott, “The Structural and Luminescense Properties of Porous Silicon”,J. Appl. Phys.,vol. 82, No. 3, Aug. 1, 1997, pp. 909-965.
J. Wang, H.B. Jiang, W.C. Wang, J.B. Zheng, F.L. Zhang, P.H. Hao, X.Y Hou, X. Wang, “Efficient Infrared-Up- 22, Conversion Luminescence in Porous Silicon: A Quantum-Confinement-Induced Effect”,Phys. Rev. Lett.,vol. 69, No. Nov. 30, 1992, pp. 3252-3255.
J. Gole, D. Dixon, “Evidence for Oxide Formation from the Single and Multiphoton Excitation of a Porous Silicon Surface or Silicon ‘Nanoparticles’”,J. Appl. Phys.,vol. 83,

Affiliated with

Also associated with

Rating

Silicon nanoparticle field effect transistor and transistor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon nanoparticle field effect transistor and transistor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon nanoparticle field effect transistor and transistor... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3574873