Silicon nanocrystal capacitor and process for forming same

Details Silicon nanocrystal capacitor and process for forming same Silicon nanocrystal capacitor and process for forming same

2005-08-02

2005-08-02

Dinkins, Anthony (Department: 2831)

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

C361S305000, C361S306300, C257S068000, C438S253000

Reexamination Certificate

active

06924969

ABSTRACT:
A storage capacitor plate for a semiconductor assembly having a substantially continuous porous conductive storage plate comprising silicon nanocrystals residing along a surface of a conductive material and along a surface of a coplanar insulative material adjacent the conductive material, a capacitor cell dielectric overlying the silicon nanocrystals and an overlying conductive top plate. The conductive storage plate is formed by a semiconductor fabrication method comprising forming silicon nanocrystals on a surface of a conductive material and on a surface of an insulative material adjacent the conductive material, wherein silicon nanocrystals contain conductive impurities and are adjoined to form a substantially continuous porous conductive layer.

REFERENCES:
patent: 5801413 (1998-09-01), Pan
patent: 6541807 (2003-04-01), Morihara
patent: 6633062 (2003-10-01), Min-Soo et al.
“Synthese and characterization of aerosol silicon nanocrystal nonvolatile floating-gate memory device”, M.L. Ostraat et al., Applied Physics Letters, vol. 79, No. 3, Jul. 16, 2001, pp. 433-435.
“Ultraclean Two-Stage Aerosol Reactor for Production of Oxide-Passivated Silicon Nanoparticles for Novel Memory Devices”, Michele L. Ostraat et al., Journal of The Electrochemical Society, 148 (5), pp. G265-G270.

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