Silicon micro-mold

Details Silicon micro-mold Silicon micro-mold

2006-10-24

2006-10-24

Mackey, James P. (Department: 1722)

Static molds

Including destructible feature

C249S115000, C249S116000, C249S134000, C249S135000

Reexamination Certificate

active

07124994

ABSTRACT:
The present invention describes a method for rapidly fabricating a robust 3-dimensional silicon-mold for use in preparing complex metal micro-components. The process begins by depositing a conductive metal layer onto one surface of a silicon wafer. A thin photoresist and a standard lithographic mask are then used to transfer a trace image pattern onto the opposite surface of the wafer by exposing and developing the resist. The exposed portion of the silicon substrate is anisotropically etched through the wafer thickness down to conductive metal layer to provide an etched pattern consisting of a series of rectilinear channels and recesses in the silicon which serve as the silicon micro-mold. Microcomponents are prepared with this mold by first filling the mold channels and recesses with a metal deposit, typically by electroplating, and then removing the silicon micro-mold by chemical etching.

REFERENCES:
patent: 5256360 (1993-10-01), Li
patent: 5501893 (1996-03-01), Laermer et al.
patent: 5660680 (1997-08-01), Keller
patent: 6136243 (2000-10-01), Mehregany et al.
patent: 6242163 (2001-06-01), Stampfl et al.
patent: 6551849 (2003-04-01), Kenney
“DEM technique: A new three-dimensional micro fabrication technique for non-silicon materials” article by Chen et al., SPIE Symposium on Design, Test and Microfabrication of MEMS and MOEMS, Mar.-Apr. 1999.

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