Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1995-09-12
1997-11-25
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257451, 257453, 257617, H01L 3100
Patent
active
056915632
ABSTRACT:
Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.
REFERENCES:
patent: 4584026 (1986-04-01), Wu et al.
patent: 4689645 (1987-08-01), Ovshinsky et al.
patent: 4807006 (1989-02-01), Rogers et al.
patent: 4821091 (1989-04-01), Hammond et al.
Mullins, B.W., et al., "A Simple High-Speed Schottky Photodiode," IEEE Photonics Technology Letters, vol. 3, No. 4, Apr. 1991, pp. 360-362.
Brueck Steven R. J.
Myers David R.
Sharma Ashwani K.
Cone Gregory A.
Guay John
Jackson Jerome
Sandia National Laboratories
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