Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1993-01-15
1995-09-12
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257448, 257436, 257617, H01L 2714, H01L 2948
Patent
active
054499453
ABSTRACT:
Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.
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B. W. Mullins, et al.; A Simple High-Speed SI Schottky Photodiode IEEE Photonics Technology Letters, vol. 3, No. 4 Apr. 1991 pp. 360-362.
U. Zammit, et al.; Ion Dose Effect in Subgap Absorption Spectra of Defects in Ion Implanted GaAs and Si; Aug. 26, 1991 Journal of Applied Physics, pp. 7060-7064.
J. Boussey-Said and G. Ghibaudo; Electrical and Structural Properties of Silicon Layers Heavily Damaged by Ion Implantation; Laoratoire de Physique des Composants a Semiconducteurs; accepted Mar. 18, 1992 Journal of Applied Physics, pp. 61-68.
W. Wesch and G. Gotz; Influence of Ion Implanatation on the Optical Properties of Silicon; Radiation Effects, 1980, vol. 49, pp. 137-140.
Brueck Steven R. J.
Myers David R.
Sharma Ashwani K.
Cone Gregory A.
Guay John F.
James Andrew J.
Olsen Kurt C.
The United States of America as represented by the U.S. Departme
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