Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus
Patent
1997-11-03
1999-07-06
Hiteshew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
117213, 117900, 65DIG8, C30B 3500
Patent
active
059193069
ABSTRACT:
A silicon melting crucible having a double structure, in which a quartz crucible is inserted inside of a carbon crucible, is provided with devices for preventing deformation, such as turning-down, buckling and bending at an upper portion of the quartz crucible, or invasion of an SiO gas into a space between the quartz crucible and the carbon crucible during pulling up of a silicon single crystal. According to one form of the invention an upper portion of the quartz crucible has a frusto-conical inclined portion with an angle of inclination desirably of from 5.degree. to 40.degree.. According to another form of the invention a carbon ring having a cross section of either L-shape or U-shape is applied to the upper portion of the quartz crucible and the carbon crucible.
Hiteshew Felisa
Sumitomo Sitix Corporation
LandOfFree
Silicon melting crucible does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Silicon melting crucible, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon melting crucible will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-896307