Silicon manufacturing apparatus

Details Silicon manufacturing apparatus Silicon manufacturing apparatus

2011-08-09

2011-08-09

Kunemund, Robert M (Department: 1714)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

With means for measuring, testing, or sensing

C117S104000, C117S200000, C118S715000, C118S718000

Reexamination Certificate

active

07993455

ABSTRACT:
A polycrystalline silicon production apparatus is provided whereby when deposited silicon is caused to drip down into an underlying collection part by heating the reaction tube inner surface at a temperature equal to or above the melting point of silicon, the silicon melt can be prevented from solidifying at a lower end portion of the reaction tube due to temperature lowering at the lower end portion. When a reaction tube is heated with a high frequency heating coil, the temperature lowering at a lower end portion of the reaction tube is prevented through temperature lowering prevention means which may be an infrared device capable of heating the outer periphery of the lower end portion by means of infrared rays, or which may be a lower end coil that is constituted by a coil near the lower end of the high frequency heating coil and has an increased heating intensity relative to an upper coil.

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