Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2007-08-07
2007-08-07
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S431000, C257S449000, C257S466000
Reexamination Certificate
active
10502765
ABSTRACT:
A silicon light-receiving device is provided. In the device, a substrate is based on n-type or p-type silicon. A doped region is ultra-shallowly doped with the opposite type dopant to the dopant type of the substrate on one side of the substrate so that a photoelectric conversion effect for light in a wavelength range of 100-1100 nm is generated by a quantum confinement effect in the p-n junction with the substrate. First and second electrodes are formed on the substrate so as to be electrically connected to the doped region. Due to the ultra-shallow doped region on the silicon substrate, a quantum confinement effect is generated in the p-n junction. Even though silicon is used as a semiconductor material, the quantum efficiency of the silicon light-receiving device is far higher than that of a conventional solar cell, owing to the quantum confinement effect. The silicon light-receiving device can also be formed to absorb light in a particular or large wavelength band, and used as a solar cell.
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Official Action issued by the Chinese Patent Office on Sep. 29, 2006 in corresponding Chinese Patent Application No. 028278747; and English translation thereof.
Choi Byoung-Lyong
Kim Jun-Young
Lee Eun-Kyung
Crane Sara
Gebremariam Samuel A.
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