Silicon light-emitting diode with integral optical waveguide

Details Silicon light-emitting diode with integral optical waveguide Silicon light-emitting diode with integral optical waveguide

1988-03-18

1989-11-28

Edlow, Martin H.

357 19, 357 56, H01L 3300

Patent

active

048841129

ABSTRACT:
The invention comprises integral all silicon light sources and 3-D optical waveguides which combine the functions of room temperature optical emission and optical signal routing. Several light emitting electrooptical silicon devices are herein disclosed. Light emitted by silicon LEDs is concentrated in channels (waveguides) and is directed to desired locations on a silicon wafer. In all of the devices, the light source is electrically actuated by a forward biased p-n junction and the light intensity can be electrically controlled by varying the applied current.

REFERENCES:
patent: Re31255 (1983-05-01), Geddes
patent: 3229104 (1966-01-01), Rutz
patent: 3465159 (1969-09-01), Stern
patent: 3952265 (1976-04-01), Hunsberger
patent: 3975751 (1976-08-01), Springthorpe
patent: 4021834 (1977-05-01), Epstein
patent: 4152044 (1979-05-01), Liu
patent: 4206468 (1980-06-01), Carballes
patent: 4573161 (1986-02-01), Sakai
patent: 4647953 (1987-03-01), Okajima

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