Silicon layer production method and solar cell production...

Details Silicon layer production method and solar cell production... Silicon layer production method and solar cell production...

2007-10-16

2007-10-16

Hiteshew, Felisa (Department: 1722)

Chemistry of inorganic compounds

Silicon or compound thereof

Oxygen containing

C117S013000, C117S054000

Reexamination Certificate

active

10563115

ABSTRACT:
A solar cell is produced by dipping a multicrystalline silicon substrate28in a solution24containing silicon, growing a silicon layer on the substrate28while decreasing with time the temperature drop rate of the solution during the dipping of the substrate in the solution, and forming a pn junction in the silicon layer. Thereby, there is provided a silicon layer production method that can form a thick layer while restraining the degree of roughness, whereby a low-cost, multicrystalline-silicon solar cell production method is provided that realizes both a large current and a high FF.

REFERENCES:
patent: 5486238 (1996-01-01), Nakagawa et al.
patent: 5510151 (1996-04-01), Matsuyama et al.
patent: 5712199 (1998-01-01), Nakagawa et al.
patent: 5714010 (1998-02-01), Matsuyama et al.
patent: 5770463 (1998-06-01), Nakagawa et al.
patent: 5981864 (1999-11-01), Mizutani et al.
patent: 5986204 (1999-11-01), Iwasaki et al.
patent: 6110347 (2000-08-01), Arao et al.
patent: 6190937 (2001-02-01), Nakagawa et al.
patent: 6211038 (2001-04-01), Nakagawa et al.
patent: 6248948 (2001-06-01), Nakagawa et al.
patent: 6258666 (2001-07-01), Mizutani et al.
patent: 6258698 (2001-07-01), Iwasaki et al.
patent: 6331208 (2001-12-01), Nishida et al.
patent: 6384313 (2002-05-01), Nakagawa et al.
patent: 6387780 (2002-05-01), Nishida
patent: 6391743 (2002-05-01), Iwane et al.
patent: 6429035 (2002-08-01), Nakagawa et al.
patent: 6452091 (2002-09-01), Nakagawa et al.
patent: 6464762 (2002-10-01), Arao
patent: 6500731 (2002-12-01), Nakagawa et al.
patent: 6566235 (2003-05-01), Nishida et al.
patent: 6566277 (2003-05-01), Nakagawa et al.
patent: 6664169 (2003-12-01), Iwasaki et al.
patent: 6682990 (2004-01-01), Iwane et al.
patent: 6756289 (2004-06-01), Nakagawa et al.
patent: 6802900 (2004-10-01), Iwane et al.
patent: 6802926 (2004-10-01), Mizutani et al.
patent: 6818104 (2004-11-01), Iwasaki et al.
patent: 6824609 (2004-11-01), Saito et al.
patent: 6869863 (2005-03-01), Nishida
patent: 6953506 (2005-10-01), Iwane et al.
patent: 7022181 (2006-04-01), Nakagawa et al.
patent: 7118625 (2006-10-01), Nishida et al.
patent: 2005/0087226 (2005-04-01), Nishida et al.
patent: 2005/0109388 (2005-05-01), Murakami et al.
patent: 2006/0194417 (2006-08-01), Ishihara et al.
patent: 49-11467 (1974-01-01), None
patent: 54-153784 (1979-12-01), None
patent: 61-261292 (1986-11-01), None
patent: 3-256324 (1991-11-01), None
patent: 5-82458 (1993-04-01), None
patent: 11-162859 (1999-06-01), None
M. Mizutani, et al., “New Type Multicrystalline SI Substrate for PV Application”, Proceedings of 19thEuropean PVSEC.

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