Silicon layer having increased surface area and method for manuf

Details Silicon layer having increased surface area and method for manuf Silicon layer having increased surface area and method for manuf

1991-06-18

1992-09-22

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437977, 20419237, 156644, 156646, 156653, 156657, H01C 21465

Patent

active

051496763

ABSTRACT:
A silicon layer having an increased surface area by providing a highly granulated surface area, and a method for manufacturing the same are disclosed. The highly granulated surface of the silicon layer of the present invention provides greater surface area relative to the surface area of the present silicon layer where both layers have the same (length and width) dimensions. The present invention provides a silicon layer for a charge storage electrode having an increased surface area by forming the surface of the silicon layer into a highly granulated topography, which is used as a charge storage electrode, to enable the capacitance of the stacked capacitor to be increased relative to a prior art stacked capacitor having the same area of the silicon layer but with less granulated topography, and provides a process of making a highly granulated silicon layer having an increased surface area relative to the existing methods of making a silicon layer and its associated surface area.

REFERENCES:
Maruo, S., "Preferential SiO.sub.2 Ethington Si Substrate by Plasma Reactive Spatler Etching", J. Appl. Phys. vol. 16, (1977) pp. 175-176.
Gittleman, J. et al., "Textured Silicon: A Selective Absorber for Solar Thermal Conversion", Appl. Phys. Letters, 35(10) Nov. 1974, pp. 742-744.
Graighead, H. "Textured thin film Si . . . Etching", Appl. Phys. Letters 37(7), Oct. 1980, pp. 653-655.

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