Silicon-integrated thin-film structure for electro-optic applica

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step acting on the...

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117 3, 117 4, 423593, C30B 3304

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061030082

ABSTRACT:
A crystalline thin-film structure suited for use in any of an number of electro-optic applications, such as a phase modulator or a component of an interferometer, includes a semiconductor substrate of silicon and a ferroelectric, optically-clear thin film of the perovskite BaTiO.sub.3 overlying the surface of the silicon substrate. The BaTiO.sub.3 thin film is characterized in that substantially all of the dipole moments associated with the ferroelectric film are arranged substantially parallel to the surface of the substrate to enhance the electro-optic qualities of the film.

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Wu et al., "Domain structure and polarization reversal in films of ferroelectric bismuth titanate", Ferroelectrics vol. 3 pp. 217-224, 1972.

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