Silicon integrated circuits

Details Silicon integrated circuits Silicon integrated circuits

1980-05-07

1982-10-05

Edlow, Martin H.

357 49, 357 59, 357 41, 357 55, 357 50, 357 56, H01L 2702

Patent

active

043530869

ABSTRACT:
A dynamic random access memory in which individual cells, including an access transistor and a storage capacitor, are formed in mesas formed on a silicon chip. The access transistor of the cell is formed on the top surface of the mesa and one plate of the storage capacitor of the cell is formed by the sidewall of the mesa and the other plate by doped polycrystalline silicon which fills the grooves surrounding the mesas isolated therefrom by a silicon dioxide layer. By this geometry, large storage surfaces, and so large capacitances, can be obtained for the capacitor without using surface area of the chip. In other embodiments, the mesas may include other forms of circuit elements.

REFERENCES:
patent: 3894893 (1975-07-01), Kabaya
patent: 4131910 (1978-12-01), Hartman
patent: 4140558 (1979-02-01), Murphy
patent: 4184085 (1980-01-01), Takahashi
patent: 4199772 (1980-04-01), Natori
patent: 4222062 (1980-09-01), Trotter
patent: 4260436 (1981-04-01), Taylor
patent: 4272776 (1981-01-01), Weijland
Chatterjee et al., IEEE Trans. Electron Devices, vol. ED-26, No. 6, Jun. 1979 pp. 827 et seq.
Philips Res. Reports, vol. 25, 1970 pp. 118 et seq.
IEEE Trans. Electron Devices, vol. ED-26, No. 4, Apr. 1979 pp. 38 et seq.

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