Silicon integrated circuit with passive devices over high resist

Details Silicon integrated circuit with passive devices over high resist Silicon integrated circuit with passive devices over high resist

1995-03-07

1996-09-24

Tran, Minhloan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257275, 257277, 257539, H01L 2980

Patent

active

055593496

ABSTRACT:
A silicon microwave monolothic integrated circuit device and method of fabricating having a high resistivity silicon substrate with a masking layer of low temperature silicon oxide, silicon nitride and polysilicon sublayers on a first area, and an epitaxial layer over the surface of the silicon substrate in a second area. The active devices are formed over the second area and the passive devices are formed over the first area.

REFERENCES:
patent: 5268315 (1993-12-01), Prasad et al.
patent: 5449953 (1995-09-01), Nathanson et al.
Taub et al., "Silicon Technologies Adjust to RF Applications", Microwaves & RF . . . , Oct. 1994, pp. 60-74, at p. 67.
Hanes et al., "MICROX--An All-Silicon Technology for Monolithic Microwave Integrated Circuits", IEEE Electron Devices Letters, vol. 14, No. 5, May 1993, pp. 219-221.

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