Silicon growth technique and apparatus using controlled microwav

Details Silicon growth technique and apparatus using controlled microwav Silicon growth technique and apparatus using controlled microwav

1980-01-28

1982-02-02

Reynolds, B. A.

Electric heating

Metal heating

Of cylinders

219 1055F, 219 1055M, 156617SP, 156DIG73, 422249, H05B 680, H05B 672, C30B 1520

Patent

active

043141285

ABSTRACT:
Control of thermal gradients in a crystal being pulled from a melt is achieved using stratified microwave coupling. Plural microwave radiators are arranged along the crystal path. The radiators are driven by power sources having stepped energy levels so that the radiated microwave energy heats successive regions of the crystal to progressively decreasing temperature levels. Each power source is swept in frequency, thereby controlling the depth of heating so as to achieve at each region a selected lateral temperature distribution (e.g., constant temperature across the crystal). Advantageously, the shape of each cavity conforms to the cross-sectional geometry of the crystal being pulled, which may be non-circular. This facilitates the growth of crystals having rectangular, trapezoidal or other shape. In such embodiment, the frequency sweep range, and possibly power, is separately controlled at different locations about the crystal so as to achieve the desired lateral temperature distribution.

REFERENCES:
patent: 2852420 (1958-09-01), Pohl
patent: 3342559 (1967-09-01), Dermatis
patent: 3851131 (1974-11-01), Johnston et al.
patent: 3857679 (1974-12-01), Allred
patent: 3974355 (1976-08-01), Bach
patent: 4140570 (1979-02-01), Voltmer et al.
patent: 4185076 (1980-01-01), Hatch et al.
patent: 4187405 (1980-02-01), Puschner et al.
patent: 4196332 (1980-04-01), Mackay et al.

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