Silicon-glass bonded wafers

Details Silicon-glass bonded wafers Silicon-glass bonded wafers

1995-12-15

1998-03-17

Whitehead, Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257432, 257433, 257435, 257436, 257 79, 257 80, 257 81, 437 62, H01L 2715, H01L 3112, H01L 3100

Patent

active

057290385

ABSTRACT:
Semiconductor-on-glass integrated circuits may include photodetectors which are stimulated by backside light passing through the glass substrate; this provides information reception by optical communication. Bipolar and field effect transistors are shielded from the light by their buried layers. Further, LEDs integrated together with photodetectors permits all optical communication among glass substrate chips. Alternative uses of glass substrate include thermal isolation for efficient thermally regulated integrated circuits.

REFERENCES:
patent: 5362667 (1994-11-01), Linn et al.
patent: 5517047 (1996-05-01), Linn et al.

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