Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2005-09-27
2008-03-11
Malsawma, Lex (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C257S063000, C257SE21092, C117S101000
Reexamination Certificate
active
07341883
ABSTRACT:
A silicon germanium (SiGe) semiconductive alloy is grown on a substrate of single crystalline Al2O3. A {111} crystal plane of a cubic diamond structure SiGe is grown on the substrate's {0001} C-plane such that a <110> orientation of the cubic diamond structure SiGe is aligned with a <1,0,−1,0> orientation of the {0001} C-plane. A lattice match between the substrate and the SiGe is achieved by using a SiGe composition that is 0.7223 atomic percent silicon and 0.2777 atomic percent germanium.
REFERENCES:
patent: 4177321 (1979-12-01), Nishizawa
patent: 5205871 (1993-04-01), Godbey et al.
patent: 5667586 (1997-09-01), Ek et al.
patent: 5759898 (1998-06-01), Ek et al.
patent: 5951757 (1999-09-01), Dubbelday et al.
patent: 6653658 (2003-11-01), Burden
patent: 6784074 (2004-08-01), Shchukin et al.
patent: 6787793 (2004-09-01), Yoshida
Koester. S.J., Hammond, R., Chu, J.O., Mooney, P.M., Ott, J.A., Webster, C.S., Lagnado, I., Houssaye, P.R., “Low Noise SIGe pMODFETs on Sapphire with 116 GHz fmax,” Device Research Conference, 2000, p. 1-2 31-32, (Jun. 19, 2000).
Choi Sang H.
King Glen C.
Park Yeonjoon
Blackburn Linda B.
Gibbens Barry V.
Malsawma Lex
The United States of America as represented by the Administrator
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