Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2008-03-11
2008-03-11
Malsawma, Lex (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C257S063000, C257SE21092, C117S101000
Reexamination Certificate
active
11242415
ABSTRACT:
A silicon germanium (SiGe) semiconductive alloy is grown on a substrate of single crystalline Al2O3. A {111} crystal plane of a cubic diamond structure SiGe is grown on the substrate's {0001} C-plane such that a <110> orientation of the cubic diamond structure SiGe is aligned with a <1,0,−1,0> orientation of the {0001} C-plane. A lattice match between the substrate and the SiGe is achieved by using a SiGe composition that is 0.7223 atomic percent silicon and 0.2777 atomic percent germanium.
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Choi Sang H.
King Glen C.
Park Yeonjoon
Blackburn Linda B.
Gibbens Barry V.
Malsawma Lex
The United States of America as represented by the Administrator
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