Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Dopant introduction into semiconductor region
Reexamination Certificate
2011-08-09
2011-08-09
Pham, Thanh V (Department: 2894)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Dopant introduction into semiconductor region
C438S500000, C438S501000, C438S933000, C257S019000, C257S055000, C257S063000, C257S065000, C257SE29297, C428S641000, C977S773000
Reexamination Certificate
active
07993947
ABSTRACT:
Highly uniform silica nanoparticles can be formed into stable dispersions with a desirable small secondary particle size. The silican particles can be surface modified to form the dispersions. The silica nanoparticles can be doped to change the particle properties and/or to provide dopant for subsequent transfer to other materials. The dispersions can be printed as an ink for appropriate applications. The dispersions can be used to selectively dope semiconductor materials such as for the formation of photovoltaic cells or for the formation of printed electronic circuits.
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Chiruvolu Shivkumar
Du Hui
Hieslmair Henry
Dardi Peter S.
Dardi & Herbert, PLLC
NanoGram Corporation
Pham Thanh V
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