Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device
Patent
1998-07-31
2000-07-11
Niebling, John F.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
438341, 438312, 257197, H05B 3500
Patent
active
060876832
ABSTRACT:
The present invention provides, in one embodiment, a method of fabricating a heterostructure bipolar transistor. This particular embodiment comprises forming a n-type doped region in a semiconductor substrate to form a collector, epitaxially forming a base on the collector, epitaxially doping the base with indium while forming the base, and forming an emitter on the base. The base is epitaxially formed, and at the same time the base is doped with indium. In other words, the indium is epitaxially incorporated within the base as the base is being formed. In addition to the indium, the base may also be epitaxially doped with boron. Since, indium is incorporated into the base with the same epitaxial process used to form the base, the damage typically associated with conventional implantation processes are not present, and thus, the high annealing temperatures to repair the damage are not required. The base can be doped and formed at the same time; thereby, saving processing time.
REFERENCES:
patent: 4492971 (1985-01-01), Bean et al.
patent: 4529455 (1985-07-01), Bean et al.
patent: 4661829 (1987-04-01), Bean et al.
patent: 4681773 (1987-07-01), Bean
patent: 4772924 (1988-09-01), Bean et al.
patent: 4794440 (1988-12-01), Capasso et al.
patent: 4861393 (1989-08-01), Bean et al.
patent: 5091767 (1992-02-01), Bean et al.
patent: 5096840 (1992-03-01), Bean et al.
patent: 5116455 (1992-05-01), Daly
patent: 5134446 (1992-07-01), Inoue
patent: 5620907 (1997-04-01), Jalali-Farahani et al.
patent: 5681763 (1997-10-01), Ham et al.
Wolf, S.; Silicon Processing for the VLSI Era vol. 2: Process Integration, Sunset Beach, CA, 1990, pp. 506-510.
C.A. King; Heterojunction Bipolar Transistors with Si.sub.1-x Ge.sub.x Alloys; 1994; pp. 157-187.
Erwin J. Prinz and James C. Sturm; Analytical Modeling of Current Gain--Early Voltage Products in Si/Si.sub.1-x Ge.sub.x /Si Heterojunction Bipolar Transistors: 1991 IEEE; pp. 853-856.
C.A. King, Judy L. Hoyt, Chris M. Gronet, James F. Gibbons, M.P. Scott and J. Turner; Si/Si.sub.1-x Ge.sub.x Heterojunction Bipolar Transistors Produced by Limited Reaction Processing; 1989 IEEE; pp. 52-54.
King Clifford A.
Kizilyalli Isik C.
Lattin Christopher
Lucent Technologies
Niebling John F.
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