Silicon germanium heterojunction bipolar transistor with...

Details Silicon germanium heterojunction bipolar transistor with... Silicon germanium heterojunction bipolar transistor with...

2005-12-06

2005-12-06

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S592000

Reexamination Certificate

active

06972441

ABSTRACT:
A bipolar transistor having a collector connected to a base, the collector including an amount of carbon sufficient to prevent a conduction band barrier at a base-collector junction.

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John D. Cressler, “SiGe HBT Technology: A new Contender for Si-Based RF and Microwave Circuit Applications”—IEEE Transactions on Microwave Theory and Techniques, vol. 46, No. 5, May 1988, pp. 572-589 (18 pages).
B. Jagannathan, et al., “Self-Aligned SiGe NPN Transistors With 285 GHzfMAXand 207 GHZfγin a Manufacturable Technology”, IEEE Electron Device Letters, vol. 23, No. 5, May 2002, pp. 258-260 (3 pages.).
Alvin J. Joseph, et al., “Impact of Profile Scaling on High-Injection Barrier Effects in Advanced UHV/CVD SiGe HBTs”,1996 IEEE, pp. 10.3.1-10.3.4 (4 pages.).
D.V. Singh, et al., “Novel Epitaxialp -Si/ n -S11-γC/C p-γSi Heterojunction Bipolar Transistors ”, 2000 IEEE, 32-4.1μ—3.4 (4 pages.).
K. E. Ehwald, et al., “Modular Integration of High-Performance SiGe:C HBTs in a Deep Submicron, Epi-Free CMOS Process”, 1999 IEEE, pp. 22.3.1-22.3.4 (4 pages.).
H. Jorg Osten, et al., “Carbon Doping of SiGe Heterobipolar Transistors”, 1998 IEEE, pp. 19-23 (5 pages.).

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