Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Heterojunction formed between semiconductor materials which...
Reexamination Certificate
2006-03-28
2006-03-28
Wille, Douglas A. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Heterojunction formed between semiconductor materials which...
C257S197000
Reexamination Certificate
active
07019341
ABSTRACT:
A silicon-germanium hetero bipolar transistor comprising a silicon collector layer, a boron-doped silicon-germanium base layer, a silicon emitter layer and an emitter contact area. The transistor is fabricated using an epitaxy process on a surface of pure silicon. An electrically inert material is incorporated into the epitaxial layers in order to link the defects in the semiconductor structure and to reduce the outdiffusion of the dopant. Thus, a transistor for high-frequency applications can be fabricated in two ways: to increase the dopant dose of the base region or to reduce the thickness of the base layer. In particular, the concentration profile of germanium in the base layer has a general shape of a triangle or trapezoid.
REFERENCES:
patent: 4885614 (1989-12-01), Furukawa et al.
patent: 5177025 (1993-01-01), Turner et al.
patent: 5189504 (1993-02-01), Nakayama et al.
patent: 5323031 (1994-06-01), Shoji et al.
patent: 5323032 (1994-06-01), Sato et al.
patent: 5352912 (1994-10-01), Crabbe et al.
patent: 5360986 (1994-11-01), Candelaria
patent: 5378901 (1995-01-01), Nii
patent: 5387807 (1995-02-01), Bayraktaroglu
patent: 5514902 (1996-05-01), Kawasaki et al.
patent: 5557118 (1996-09-01), Hashimoto
patent: 6049098 (2000-04-01), Sato
patent: 3630282 (1988-03-01), None
patent: 3823249 (1989-01-01), None
patent: 4301333 (1994-07-01), None
patent: 19533313 (1997-03-01), None
patent: 052561 (1992-07-01), None
patent: 0581369 (1994-02-01), None
patent: 0717435 (1996-06-01), None
patent: 63-102311 (1988-05-01), None
patent: 04-106980 (1992-04-01), None
patent: 05-090285 (1993-04-01), None
patent: 5102177 (1993-04-01), None
patent: 06-061434 (1994-03-01), None
patent: 06-224127 (1994-08-01), None
patent: 07-176541 (1995-07-01), None
Si Heterojunction Bipolar Transistors, L.D. Lanzerotti; IEDM Technical Digest; International Electronic Devices Meeting; Dec. 11-14, 1994.
Heterojunction Bipolar Transisters; L.D. Lanzerotti; IEEE; 1996.
IEDM Technical Digest; International Electronic Devices Meeting; Dec. 8-11, 1996.
Physics of Semiconductor Devices, 2nd Edition; John Wiley & Sons, Inc., 1981.
High Speed SiGe-HBT With Very Low Base Sheet Resistivity; E. Kasper; 1993 IEEE.
Optimization of SiGe HBT Technology for High Speed Analog and Mixed-Signal Applications; D.L. Harame; 1993 IEEE.
2001 IEDM Call for Papers, IEEE International Electron Devices Meeting. (No date provided.)
2001 IEDM; 2001 IEEE International Electron Devices Meeting; Dec. 3-5,2001.
L.D. Lanzerotti et al.: Si/Sil-x-yGexCy/Si Heterojunction Bipolar Transistors; IEEE Electron Device Letters, vol. 17, No. 7, Jul. 1996, pp. 334-337.
K. Eberl et al.: Growth and straing compensation efects in the ternary Sil-x-yGexCyalloy system; Appl. Phys. Lett., vol. 60, No. 24, pp. 3033-3035, 1992.
J. L. Regolini et al.: Growth and characterization of strain compensated Sil-x-yGexCyepitaxial layers; Meter. Lett., vol. 18, pp. 57-60, 1993.
SiGe Base bipolar Technology with 74 Ghz fmaxand 11 ps Gate Delay; T. F. Meister, IEDM95-739.
Prinz et al.; The Effects of Base Dopant Outdissusion and Undoped Si-Ge Junction Spacer Layers in Si/Si-Ge/Si Heterojunction Bipolar Transistors; pp. 42-44; IEEE Electron Device Letters, vol. 12, No. 2, Feb. 1991.
Liefting et al.; Improved Device Performance by Multistep or Carbon Co-Implants; pp. 50-55; IEEE Transactions on Electron Devices, vol. 41, No. 1, Jan. 1994.
Lombardo et al.; Reduction of secondary defect density by C and B implants in GeSi layers formed by high dose Ge implantation in (100) Si; pp. 2335-2337: Appl. Phys. Lett. 62 (19), May 10, 1993.
Harame et al.: Si/SiGe Epitaxial-Base Transistors-Part I: Materials, Physics, and Circuits; pp. 455-468 ISEE Transactions on Electron Devices, vol. 42, No. 3, Mar. 1995.
Shafi et al.: Analysis and modeling of the base currents of Si/Si-Ge heterojunction bipolar transistors fabricated in high and low oxygen content material; pp. 2823-2829; J. Appl. Phys., 78 (4), Aug. 15, 1995.
Herbots et al.; The onset of secondary phase preciptation during synthesis of heteroepitaxial Si-GeC on Si(100); pp. 782-784; Appl. Phys. Lett. 68 (6), Feb. 5, 1996.
D. Lanzerotti et al.: Suppression of Boron Outdiffusion in SiGe HBTs by Carbon Incorporation; pp. 249-252; IEEE IEDM Technical Digest, 1996.
H. J. Osten et al.: Influence of interstitial carbon defects on electron transport in strained Sil-yCyLayers on Si(001); Appl. Phys. Lett., vol. 76, No. 2, pp. 200-202, Jan. 10, 2000.
H. J. Osten: Supersaturated carbon in silicon and silicon/germanium alloys; Materials Science and Engineering, B36 (1996), pp. 268-274.
R. Hull: Equilibrium theories of misfit dislocation networks in the SiGe/Si system; vol. 1,2, pp. 9-20, May 1999.
Heinemann Bernd
Lippert Gunther
Osten Hans-Jörg
IHP GmbH - Innovations for High Performance Microelectronics/Ins
Ware Fressola Van Der Sluys & Adolphson LLP
Wille Douglas A.
LandOfFree
Silicon germanium hetero bipolar transistor having a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Silicon germanium hetero bipolar transistor having a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon germanium hetero bipolar transistor having a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3524283