Silicon gate CCD structure

Details Silicon gate CCD structure Silicon gate CCD structure

1976-11-01

1977-07-19

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29589, 148188, 357 24, 357 59, 357 91, B01J 1700

Patent

active

040359069

ABSTRACT:
Processes for manufacturing two-phase charge coupled devices (CCDs) having marginally overlapping phase electrodes and utilizing a single insulating material. Offset self-alignment techniques are used to achieve accurate location of ion implanted potential well or potential barrier regions to achieve the required asymmetry of potential wells (or threshold voltages) in each gate region of the CCD with small bit or charge storage element sizes leading to structures having a high packing density. Fabrication of surface and buried channel structures is described.

REFERENCES:
patent: 3673679 (1972-07-01), Carbajal
patent: 3908262 (1975-09-01), Stein
patent: 3924319 (1975-12-01), Moksen
patent: 3931674 (1976-01-01), Amelio
patent: 3933529 (1976-01-01), Goser

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