Silicon film with improved thickness control

Details Silicon film with improved thickness control Silicon film with improved thickness control

1991-08-28

1993-10-26

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 61, 437974, H01L 21306, H01L 2184

Patent

active

052565815

ABSTRACT:
A method of fabricating a silicon film with improved thickness control and low defect density. The method comprises implanting a silicon wafer (19) with hydrogen ions to produce a layer of n-type silicon (18) having a precisely controlled thickness. Bonding the n-type silicon layer (18) to an oxidized surface (17) of a handle wafer (21) while using a temperature of 200 degrees Celsius. Etching the silicon wafer (19) to the boundary of the n-type layer (18). Annealing the silicon to drive out the hydrogen ions, leaving a silicon film (18) with a precisely controlled thickness and of the same type as the original silicon wafer (19).

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