Silicon film bulk acoustic wave device and process of the same

Details Silicon film bulk acoustic wave device and process of the same Silicon film bulk acoustic wave device and process of the same

2008-04-08

2008-04-08

Budd, Mark (Department: 2834)

Electrical generator or motor structure

Non-dynamoelectric

Piezoelectric elements and devices

C310S324000, C310S334000

Reexamination Certificate

active

10565255

ABSTRACT:
The present invention relates to a film bulk acoustic wave device and a method of manufacturing the same, wherein comprising an acoustic reflective layer which is formed on a substrate by removing a sacrificial layer on the substrate and becomes an empty space; an oxidation protective film or etch protecting film which is formed in a pattern that divides a resonance region to form the acoustic reflective layer on the sacrificial layer; a thermal oxidation film which is formed by partially thermally oxidizing the sacrificial layer in an electrode region where the oxidation protective film or the etch protecting film is not formed; and a lower electrode, a piezoelectric thin film, and an upper electrode all of which are disposed on the thermal oxide. Further, the present invention is directed to a method of manufacturing the same.

REFERENCES:
patent: 5185589 (1993-02-01), Krishnaswamy et al.
patent: 5853601 (1998-12-01), Krishaswamy et al.
patent: 5872493 (1999-02-01), Ella
patent: 6586861 (2003-07-01), Misu et al.
patent: 7094678 (2006-08-01), Bradley

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