Silicon etching process for making microchannel plates

Electrolysis: processes – compositions used therein – and methods – Electrolytic coating – Coating selected area

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

205219, 205221, 205223, 205656, 205665, 205674, 205675, C25D 534, C25D 548, C25D 906, C25F 312

Patent

active

059977132

ABSTRACT:
An element with elongated, high aspect ratio channels such as microchannel plate is fabricated by electrochemical etching of a p-type silicon element in a electrolyte to form channels extending through the element. The electrolyte may be an aqueous electrolyte. For use as a microchannel plate, the; the silicon surfaces of the channels can be converted to insulating silicon dioxide, and a dynode material with a high electron emissivity can be deposited onto the insulating surfaces of the channels. New dynode materials are also disclosed.

REFERENCES:
patent: 4874484 (1989-10-01), Foell et al.
patent: 5139624 (1992-08-01), Searson et al.
patent: 5262021 (1993-11-01), Lehmann et al.
patent: 5348627 (1994-09-01), Propst et al.
patent: 5431766 (1995-07-01), Propst et al.
patent: 5529950 (1996-06-01), Hoenlein et al.
patent: 5544772 (1996-08-01), Soave et al.
patent: 5569355 (1996-10-01), Then et al.
patent: 5635706 (1997-06-01), She et al.
Thin-Film Amorphous Silicon Dynodes for Electron Multiplication, G.W. Tasker, et al, (Materials Research Society, vol. 192).
The Physics of Macropore Formation in Low Doped n-Type Silicon, V. Lehmann, J. Electrochem. Soc. vol. 140 No. 10 Oct. 1993, The Electrochemical Society, Inc.
Properties of Silicon-Electrolyte Junctions and Their Application to Silicon Characterization, H. Foll, Appl. Phys. A 53,8-19 (1991).
A New Capacitor Technology Based On Porous Silicon, V. Lehmann, et al, Nov. 1995, Solid State Technology, pp. 99, 100, 102.
The Physics Of Macroporous Silicon Formation, V. Lehmann, Thin Solid Films 255 (1995) 1-4.
High Aspect Ratio Submicron Silicon Pillars Fabricated By Photoassisted Electrochemical Etching And Oxidation, J.W. Lau and G.J. Parker 1995 American Institute of Physics.
The Photoelectrochemical Oxidation of n-Si in Anhydrous HF-Acetonitrile, Eric Propst and Pual A. Kohl, J. Electrochem. Soc., vol. 140, No. 5, May 1993.
Processing of Three-Dimensional Microstructures Using Macraporous n-Type Silicon, Ottow, et al, J. Electrochem. Soc., vol. 143, No. 1 Jan. 1996.
The Electrochemical Oxidation of Silicon and Formation of Porous Silicon in Acetonitrile, E. Propst and Paul Kohl J. Electrochem. Soc., vol. 141, No. 4 Apr. 1994.
Microfabrication of Silicon Via Photoetching, The Electrochemical Society Proceedings vol. 94-32, pp. 350-361.
Sensor Fusion III, Apr. 19-20, 1990, SPIE--The International Society forOptical Engineering, vol. 1306.
Formation Mechanism and Properties of Electrochemically Etched Trenches in n-Type Silicon, V. Lehmann and H. Foll, J. Electrochem. Soc., vol. 137, No. 2 Feb. 1990.
Technology Of Channel Plate Manufacture, ACTA Electronica, vol. 14, No. 2, 1971, pp. 201-224.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Silicon etching process for making microchannel plates does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon etching process for making microchannel plates, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon etching process for making microchannel plates will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-819844

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.