Patent
1989-03-15
1990-09-25
Healy, Brian
350 9613, 350 9611, 350 9612, 350320, 357 19, 357 20, 357 234, 357 2312, 357 2314, 357 30, G02B 610, H01L 2906
Patent
active
049588982
ABSTRACT:
A double-injection transistor structure with an MOS gate is utilized as a guided-wave electro-optic phase modulator at infrared wavelengths in a silicon-on-insulator (SOI) waveguide. Cathode, gate and anode regions are integrated in the waveguide, longitudinally. The effective phase modulation is given by the voltage-variable overlap of the guided-mode optical field with carrier-induced local changes in the silicon refractive index. An electron-hole plasma is injected under the gate by cathode and anode. Using depletion-layer widening, the plasma channel width and mode overlap are controlled very rapidly by one or two low-power gate electrodes.
REFERENCES:
patent: 3970364 (1976-07-01), Gerson et al.
patent: 4693547 (1987-09-01), Soref et al.
patent: 4728167 (1988-03-01), Soref et al.
patent: 4737003 (1988-04-01), Matsumura et al.
patent: 4746183 (1988-05-01), Soref et al.
patent: 4784451 (1988-11-01), Nakamaura et al.
patent: 4787691 (1988-11-01), Lorenzo et al.
patent: 4789642 (1988-12-01), Lorenzo et al.
patent: 4832430 (1989-05-01), Tada et al.
patent: 4840446 (1989-06-01), Nakamura et al.
patent: 4844572 (1989-07-01), Popovic
patent: 4877299 (1989-10-01), Lorenzo et al.
Friedman Lionel
Soref Richard A.
Healy Brian
Nathans Robert L.
Singer Donald J.
The United States of America as Represented by the Secretary of
LandOfFree
Silicon double-injection electro-optic modulator with insulated- does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Silicon double-injection electro-optic modulator with insulated-, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon double-injection electro-optic modulator with insulated- will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-325758