Silicon dopant source in intermetallic semiconductor growth oper

Details Silicon dopant source in intermetallic semiconductor growth oper Silicon dopant source in intermetallic semiconductor growth oper

1983-12-08

1985-03-12

Saba, William G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29576E, 148174, 156605, 156606, 156610, 156613, 156614, 156DIG70, 156DIG104, 252951, 427 85, 427 87, H01L 21205, H01L 21322

Patent

active

045043310

ABSTRACT:
In intermetallic semiconductor crystal growth such as the growth of GaAs and GaAlAs, silicon as a dopant can be introduced more efficiently and evenly when provided as a gaseous hydride based compound involving a molecule where there are joined silicon atoms such as Si.sub.2 H.sub.6 to Si.sub.5 H.sub.12.

REFERENCES:
patent: 3492175 (1970-01-01), Conrad et al.
patent: 4128733 (1978-12-01), Fraas et al.
patent: 4147571 (1979-04-01), Stringfellow et al.
patent: 4220488 (1980-09-01), Duchemin et al.
patent: 4329189 (1982-05-01), Noad et al.
Bass, S. J., "Silicon and Germanium Doping . . . Gallium Arsenide . . . " J. Crystal Growth, v. 47, 1979, pp. 613-618.
"A New Method for Growing GaAs Epilayers by Low Pressure Organometallics" by Duchemin et al., J. of the Electrochemical Soc., vol. 126, No. 7, Jul. 1979, pp. 1134-1142.
"Si Doped GaAs Using a SiCl.sub.4 Techique in a AsCl.sub.3 /Ga/H.sub.2 CVD System for MESFET" by Feng et al., Inst. Phys. Conf., Ser. No. 56: Chapter 1, pp. 1-8.
"Preparation of Amorphous Silicon Films by Chemical Vapor Deposition from Higher Silanes Si.sub.n H.sub.2n+2 (n>1)" by Gau et al., Appl. Phys. Lett. 39 (5), Sep. 1, 1981, pp. 436-438.

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