Silicon dioxide film forming method

Details Silicon dioxide film forming method Silicon dioxide film forming method

2007-05-01

2007-05-01

Chen, Bret (Department: 1762)

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

C427S255370, C427S255393

Reexamination Certificate

active

10830317

ABSTRACT:
Disclosed herein is a silicon dioxide film forming method including: a reaction chamber heating step of heating a reaction chamber to a predetermined temperature, the reaction chamber containing an object to be processed; a gas pretreating step of energizing a process gas to produce water, the process gas including hydrogen, chlorine, and oxygen gas; and a film forming step of forming a silicon dioxide film by supplying the the process gas that has been energized to produce water into the heated reaction chamber to oxidize the silicon layer of the object to be processed.

REFERENCES:
patent: 3934117 (1976-01-01), Schladitz
patent: 4123564 (1978-10-01), Ajima et al.
patent: 4155802 (1979-05-01), Yonezawa et al.
patent: 4231809 (1980-11-01), Schmidt
patent: 4349408 (1982-09-01), Tarng et al.
patent: 4420497 (1983-12-01), Tickle
patent: 4518630 (1985-05-01), Grasser
patent: 4544416 (1985-10-01), Meador et al.
patent: 4566173 (1986-01-01), Gossler et al.
patent: 4693925 (1987-09-01), Cheung et al.
patent: 4784975 (1988-11-01), Hofmann et al.
patent: 4826709 (1989-05-01), Ryan et al.
patent: 5225378 (1993-07-01), Ushikawa
patent: 5234501 (1993-08-01), Nakao et al.
patent: 5318920 (1994-06-01), Hayashide
patent: 5331134 (1994-07-01), Kimura
patent: 5443998 (1995-08-01), Meyer
patent: 5631199 (1997-05-01), Park
patent: 5633212 (1997-05-01), Yuuki
patent: 5669768 (1997-09-01), Lin et al.
patent: 5693578 (1997-12-01), Nakanishi et al.
patent: 5777300 (1998-07-01), Homma et al.
patent: 5810929 (1998-09-01), Yuuki
patent: 5861190 (1999-01-01), Greene et al.
patent: 6031205 (2000-02-01), Shimazu
patent: 6037273 (2000-03-01), Gronet et al.
patent: 6221791 (2001-04-01), Wang et al.
patent: 6239044 (2001-05-01), Kashiwagi et al.
patent: 6281141 (2001-08-01), Das et al.
patent: 6287984 (2001-09-01), Horie
patent: 6335295 (2002-01-01), Patel
patent: 6369361 (2002-04-01), Saito et al.
patent: 6391738 (2002-05-01), Moore
patent: 6440382 (2002-08-01), Powell
patent: 6516143 (2003-02-01), Toya et al.
patent: 6540509 (2003-04-01), Asano et al.
patent: 6541278 (2003-04-01), Morita et al.
patent: 6589349 (2003-07-01), Kashiwagi et al.
patent: 6797323 (2004-09-01), Kashiwagi et al.
patent: 6863732 (2005-03-01), Asano et al.
patent: 6903030 (2005-06-01), Ishii et al.
patent: 2001/0041462 (2001-11-01), Kashiwagi et al.
patent: 2001/0046792 (2001-11-01), Takahashi et al.
patent: 2001/0049080 (2001-12-01), Asano et al.
patent: 2002/0119327 (2002-08-01), Arkles et al.
patent: 2003/0106495 (2003-06-01), Asano et al.
patent: 39 33 423 (1991-04-01), None
patent: 0 798 769 (1997-10-01), None
patent: 0 872 878 (1998-10-01), None
patent: 2 291 171 (1996-01-01), None
patent: 62-089364 (1987-04-01), None
patent: 63-017544 (1988-01-01), None
patent: 64-069056 (1989-03-01), None
patent: 4-27136 (1992-01-01), None
patent: 5-335250 (1993-12-01), None
patent: 08-227883 (1996-09-01), None
patent: 10-060649 (1998-03-01), None
patent: 11-186248 (1999-07-01), None
patent: 11-204511 (1999-07-01), None
patent: 2000-058532 (2000-02-01), None
patent: 2000-208500 (2000-07-01), None
patent: 2001-345316 (2001-12-01), None
patent: WO 00/48240 (2000-08-01), None

Affiliated with

Also associated with

Rating

Silicon dioxide film forming method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon dioxide film forming method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon dioxide film forming method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3729548