Silicon dioxide etch process which protects metal

Details Silicon dioxide etch process which protects metal Silicon dioxide etch process which protects metal

1997-01-10

1999-03-23

Utech, Benjamin

Compositions

Etching or brightening compositions

Inorganic acid containing

252 793, 252 794, C09K 1304, C09K 1308, C09K 1306

Patent

active

058854770

ABSTRACT:
The present invention is directed to a novel etching process for a semiconductor material which inhibits corrosion of metal comprised of pretreating the material, preferably with a surfactant, and then exposing the material to a mixture comprising salt, a buffered oxide etch, and optionally a surfactant.

REFERENCES:
patent: 2622016 (1952-12-01), Gilstrap et al.
patent: 3616098 (1971-10-01), Falls
patent: 3671437 (1972-06-01), Pless
patent: 3860464 (1975-01-01), Erdman et al.
patent: 4040897 (1977-08-01), Blish, II et al.
patent: 4735906 (1988-04-01), Bastiaans

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