Silicon dioxide etch process which protects metal

Details Silicon dioxide etch process which protects metal Silicon dioxide etch process which protects metal

1995-06-07

1997-12-09

Tung, T.

Etching a substrate: processes

Nongaseous phase etching of substrate

Etching inorganic substrate

1566561, 216103, 216104, 216108, 216109, 252 793, 252 794, H01L 2100

Patent

active

056956614

ABSTRACT:
The present invention is directed to a novel etching process for a semiconductor material which inhibits corrosion of metal comprised of pretreating the material, preferably with a surfactant, and then exposing the material to a mixture comprising salt, a buffered oxide etch, and optionally a surfactant.

REFERENCES:
patent: 4040897 (1977-08-01), Blish, II et al.
patent: 5164018 (1992-11-01), Barcelona
patent: 5281350 (1994-01-01), Gimm et al.

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