Silicon dioxide deposition method using a magnetic field and bot

Details Silicon dioxide deposition method using a magnetic field and bot Silicon dioxide deposition method using a magnetic field and bot

1990-09-20

1992-02-18

Hearn, Brian E.

Heating

Heating apparatus element having protective cooling structure

Conveyor, chute or work agitator element

437 50, 437225, 437228, 437238, 427 38, 427 39, 427 47, 20419212, 20419215, H01L 2100, H01L 2102, H01L 2128, H01L 2188

Patent

active

050894420

ABSTRACT:
In plasma enhanced chemical vapor deposition (PECVD) of silicon dioxide on a substrate, voids and discontinuities are reduced by first depositing silicon dioxide in a sputter each chamber (22) in which a magnetic field is produced within the rf plasma for depositing the silicon dioxide. Simultaneous sputter etch and deposition occurs which inhibits net deposition at the corners of metal conductors over which the silicon dioxide is deposited. The substrate is then removed and transferred through a load lock (27) to a conventional PECVD deposition chamber (23).

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