Silicon dioxide bonding layers and method

Details Silicon dioxide bonding layers and method Silicon dioxide bonding layers and method

1993-11-08

1995-08-15

Thomas, Alexander S.

Stock material or miscellaneous articles

Liquid crystal optical display having layer of specified...

With charge transferring layer of specified composition

359 74, G02F 1135

Patent

active

054417767

ABSTRACT:
A liquid crystal light valve that has an indium tin oxide (ITO) primary electrode disposed between two silicon dioxide bonding layers. The first bonding layer for bonding the primary electrode to a glass substrate and the second bonding layer for bonding said primary electrode to a hydrogenated amorphous silicon layer. The ITO primary electrode is sputtered which significantly reduces processing time and the silicon dioxide bonding layers allow the primary electrode to be bonded to the glass substrate and the hydrogenated amorphous silicon layer without peeling. For some applications the silicon dioxide bonding layer between the glass substrate and the primary electrode is not necessary.

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