Silicon crystallization using self-assembled monolayers

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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C438S150000, C438S166000, C438S488000

Reexamination Certificate

active

07071022

ABSTRACT:
A display device comprises a substrate having a layer of crystalline or polycrystalline semiconductor material disposed over the substrate, wherein the substrate has a strain point that is lower than a forming temperature of the layer. The crystalline or polycrystalline material is fabricated by a method that includes providing a self-assembled monolayer (SAM) over the substrate, depositing a layer of material over the SAM, and substantially crystallizing the layer.

REFERENCES:
patent: 5147826 (1992-09-01), Liu et al.
patent: 5352485 (1994-10-01), DeGuire et al.
patent: 5751018 (1998-05-01), Alivisatos et al.
patent: 5879970 (1999-03-01), Shiota et al.
patent: 5940693 (1999-08-01), Maekawa
patent: 6225197 (2001-05-01), Maekawa
patent: 6241817 (2001-06-01), Jang et al.
patent: 6432757 (2002-08-01), Noguchi et al.
patent: 6448118 (2002-09-01), Yamazaki et al.
patent: 6464780 (2002-10-01), Mantl et al.
patent: 6596116 (2003-07-01), Bian et al.
patent: 2001/0012567 (2001-08-01), Saitoh et al.
patent: 2005/0012099 (2005-01-01), Couillard et al.
patent: 0 598 361 (1994-05-01), None
patent: 0598361 (1994-05-01), None
patent: 0 651 431 (1995-05-01), None
patent: 1 119 053 (2001-07-01), None
patent: WO03/057949 (2003-07-01), None
Niesen, et al.; “Chemical liquid deposition of gallium nitride thin films on siloxane-anchored self-assembled monolayers”; Materials Chemistry and Physics 73 (2002) pp. 301-305.
X. Xu, Joseph Cesarano III, Eileen Burch, Gabriel P. Lopez, “Template-assisted electrochemical deposition of ultrathin films of cadmium sulfide”, Thin Solid Films 305 (1997) 95-102.
D. Ji et al., “Improved protein crystallization by vapor diffusion from drops in contact with transparent, self-assembled monolayers on gold-coated glass coverslips”, Journal of Crystal Growth 218 (2000) 390-398.
Joanna Aizenberg, Andrew J. Black and George M. Whitesides, “Control of crystal nucleation by patterned self-assembled monolayers”, Nature, vol. 398, Apr. 1999, pp. 495-498.
R. Staub et al., “Scanning tunneling mircroscope investigations of organic heterostructures prepared by a combination of self-assembly and molecular beam epitaxy”, Surface Science 445 (2000) 368-379.
J. Flath et al., “Nucleation and growth of semiconductor particles on self-assembled monlayers by chemical solution deposition”, Thin Solid Films 327-329 (1998) 506-509.
H. Lin et al., “Preparation of Ti02 films on self-assembled monolayers by sol-gel method”, Thin Solid Films 315 (1998) 111-117.
Hansuk Kim, J. Greg Couillard, and Dieter G. Ast, “Kinetics of silicide-induced crystallization of polycrystalline thin-film transistors fabricated from amorphous chemical-vapor deposition silicon”, Applied Physics Letters, vol. 72, No. 7, Feb. 16, 1998, pp. 803-805.
Agarwal et al, “Synthesis of Zr02 and Y2O3-Doped ZrO2 Thin Films Using Self-Assembled Monolayers”, Journal of the American Ceramic Society, 80 (12) 2967-81 (1997).
N.D. Zakharov et al., “Structure and optical properties of Ge/Si superlattice grown at Si substrate by MBE at different temperatures”, Materials Science and Engineering B87 (2001) 92-95.

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