Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1997-04-10
2000-06-20
Hiteshew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 15, 117 18, 117214, 117904, C30B 1520
Patent
active
060773456
ABSTRACT:
The amount of silicon feed material supplied to a silicon melt furnace in a silicon crystal web growing installation is controlled by providing a melt level reference signal, generating a melt level signal representative of the level of the molten silicon in the silicon melt furnace, and providing a feed rate control signal representative of the difference between the melt level signal and the melt level reference signal. The feed rate control signal is used in a open loop mode to advise an operator of the amount of adjustment needed to correct the melt level; and is used in a closed loop mode to control the feed rate of the silicon feed material to the furnace. The laser beam reflected off the melt surface is passed through a narrow bandpass filter to remove noise due to thermal radiation from the furnace. The melt level signals generated by a position detector are averaged and digitally filtered to eliminate erroneous data caused by mechanical vibrations and other noise sources.
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patent: 5961715 (1999-10-01), Ikeda
Easoz John R.
Isobe Takashi
Ebara Solar, Inc.
Hiteshew Felisa
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