Silicon corner rounding in shallow trench isolation process

Details Silicon corner rounding in shallow trench isolation process Silicon corner rounding in shallow trench isolation process

1997-04-14

1998-09-22

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438425, 438426, 438437, 148DIG50, H07L 2176

Patent

active

058113460

ABSTRACT:
A semiconductor device isolating structure and method for forming such a structure. In one embodiment, an opening is formed through a mask layer overlying a semiconductor substrate. A trench of a desired depth is then etched into the semiconductor substrate at the area of the semiconductor substrate underlying the opening in the mask layer. The trench is then filled with a dielectric material. After an oxide planarizing process, the present invention exposes the dielectric-filled trench to an oxidizing environment. By filling the trench with dielectric material prior to the oxidization step, the present invention selectively oxidizes the semiconductor substrate at corners formed by the intersection of the sidewalls of the trench and the top surface of the semiconductor substrate. In so doing, the present invention forms smoothly rounded semiconductor substrate corners under the mask layer. Thus, the present invention eliminates the sharp upper corners associated with prior art shallow trench isolation methods.

REFERENCES:
patent: 4916086 (1990-04-01), Takahashi et al.
patent: 5130268 (1992-07-01), Liou et al.
patent: 5674775 (1997-10-01), Ho et al.
patent: 5719085 (1998-02-01), Moon et al.

Affiliated with

Also associated with

Rating

Silicon corner rounding in shallow trench isolation process does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon corner rounding in shallow trench isolation process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon corner rounding in shallow trench isolation process will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1621530