Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Having only two terminals and no control electrode – e.g.,...
Patent
1995-06-07
1997-06-10
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Having only two terminals and no control electrode , e.g.,...
257133, 257140, 257144, 361 18, 361 93, H01L 2974, H02H 700, H02H 300
Patent
active
056378874
ABSTRACT:
A thyristor device includes first and second terminals, a PNPN thyristor structure including first P-region, a first N-region, a second P-region and a second N-region disposed in series between the first and second terminals, and an electrode for inducing an electric field into the second P-region. The induced electric field increases the number of charge carriers in the second P-region, and enables the device to be triggered at a lower voltage applied between the first and second terminals. The electrode includes an insulated gate, and can be connected to either the first or second terminal. The gate can include a thick field oxide layer, or a thin oxide layer to further reduce the triggering voltage. A differentiator including a capacitor connected between the first terminal and the electrode and a resistor connected between the second terminal and the electrode prevents false triggering during normal operation. A metal interconnection layer includes an anode section which is connected to the N-region and to the second terminal, and a cathode section which is connected to the P-region, the first terminal and the electrode, such that the cathode section laterally surrounds the anode section.
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Abraham Fetsum
Fahmy Wael
LSI Logic Corporation
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